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GB02SHT01-46 - High Temperature Silicon Carbide Power Schottky Diode

Features

  • 100 V Schottky rectifier.
  • 210 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Package.
  • RoHS Compliant GB02SHT01-46  VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 TO.
  • 46 Advantages.
  • High temperature operation.
  • Improved circuit ef.

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Datasheet Details

Part number GB02SHT01-46
Manufacturer GeneSiC
File Size 371.92 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Datasheet download datasheet GB02SHT01-46 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant GB02SHT01-46  VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 TO – 46 Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industry’s lowest device capacitance  Ideal for output switching of power supplies  Best in class r
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