• Part: GB02SHT01-46
  • Description: High Temperature Silicon Carbide Power Schottky Diode
  • Manufacturer: GeneSiC
  • Size: 371.92 KB
Download GB02SHT01-46 Datasheet PDF
GB02SHT01-46 page 2
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GB02SHT01-46 page 3
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Datasheet Summary

  High Temperature Silicon Carbide Power Schottky Diode Features - 100 V Schottky rectifier - 210 °C maximum operating temperature - Zero reverse recovery charge - Superior surge current capability - Positive temperature coefficient of VF - Temperature independent switching behavior - Lowest figure of merit QC/IF - Available screened to Mil-PRF-19500 Package - RoHS pliant GB02SHT01-46  VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 - 46 Advantages - High temperature operation - Improved circuit efficiency (Lower overall cost) - Low switching losses - Ease of paralleling devices without thermal runaway - Smaller heat sink requirements - Industry’s lowest reverse recovery charge -...