GS61008P transistor equivalent, 100v enhancement mode gan transistor.
* 100 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM die
* Low inductan.
* Energy Storage Systems
* AC-DC Converters (secondary side)
* Uninterruptable Power Supplies
* Industri.
The GS61008P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Te.
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