GS61004B Overview
Description
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency.
Key Features
- 100V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 16 mΩ
- IDS(max) = 38 A
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
