GS815018AB-300 sram equivalent, 1m x 18/ 512k x 36 18mb register-register late write sram.
* Register-Register Late Write mode, Pipelined Read mode
* 2.5 V +200/
–200 mV core power supply
* 1.5 V or 1.8 V HSTL Interface
* ZQ contr.
and in Flow Through mode NBT SRAMs. Byte Write Control The Byte Write Enable inputs (Bx) determine which bytes will be w.
250 MHz
–357 MHz 2.5 V VDD HSTL I/O
Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initia.
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