SSF5510G mosfet equivalent, n-channel mosfet.
* Advanced trench process technology
* Ultra low Rdson, typical 8mohm
* High avalanche energy, 100% test
* Fully characterized avalanche voltage and curre.
* Power switching application
SSF5510G Top View
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain .
The SSF5510G is a new generation of middle voltage and high current N
–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in h.
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