SSF5508D mosfet equivalent, n-channel mosfet.
SSF5508D Top View (DPAK)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 15.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C IDM ISM
C.
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use i.
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