SSF3612E mosfet equivalent, n-channel mosfet.
* VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V
* High Power and current handling capability
* Lead free pro.
The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directiona.
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