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SSF3051G7 - P-Channel MOSFET

Download the SSF3051G7 datasheet PDF. This datasheet also covers the SSF3051G7-GOOD variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • SOT23-6.
  • Advanced trench MOSFET process technology.
  • Special designed for buttery protection, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature.
  • Lead free product SSF3051G7 30V P-Channel MOSFET 3051G7 D G Marking and Pin Assignment S Schematic Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF3051G7-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF3051G7
Manufacturer GOOD-ARK
File Size 929.60 KB
Description P-Channel MOSFET
Datasheet download datasheet SSF3051G7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A Features and Benefits: SOT23-6  Advanced trench MOSFET process technology  Special designed for buttery protection, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3051G7 30V P-Channel MOSFET 3051G7 D G Marking and Pin Assignment S Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.