GDSSF2814E mosfet equivalent, mosfet.
* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating：2000V HBM
* High Power and cu.
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GDSSF2814E
GENERAL FEATURES
* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(.
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