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GT023N10 - N-Channel Enhancement Mode Power MOSFET

Download the GT023N10 datasheet PDF. This datasheet also covers the GT023N10M variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.7mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT023N10M-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT023N10
Manufacturer GOFORD
File Size 945.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT023N10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT023N10M N-Channel Enhancement Mode Power MOSFET
GT025N06 N-Channel Enhancement Mode Power MOSFET
GT025N06AD5 N-Channel Enhancement Mode Power MOSFET
GT025N06AT N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT023N10M N-Channel Enhancement Mode Power MOSFET Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.