GT025N06AD5 Datasheet Text
GT025N06AD5
N-Channel Enhancement Mode Power MOSFET
Description
The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
60V 170A < 2mΩ < 2.5mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram pin assignment
Application l Power switch l DC/DC converters
DFN5- 6-8L
Ordering Information
Device GT025N06AD5
Package DFN5- 6-8L
Marking GT025N06
Packaging...