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G700P06 - P-Channel Enhancement Mode Power MOSFET

Download the G700P06 datasheet PDF. This datasheet also covers the G700P06LL variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 75mΩ < 90mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G700P06LL-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G700P06
Manufacturer GOFORD
File Size 870.54 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G700P06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G700P06J P-Channel Enhancement Mode Power MOSFET
G700P06LL P-Channel Enhancement Mode Power MOSFET
G700P06T P-Channel Enhancement Mode Power MOSFET
G70N04 N-Channel Enhancement Mode Power MOSFET
G70N04T N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G700P06LL P-Channel Enhancement Mode Power MOSFET Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.