G700P06T Datasheet Text
G700P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G700P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS pliant
-60V -25A < 70mΩ < 85mΩ
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G700P06T
Package TO-220
Marking...