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G040P04 - P-Channel Enhancement Mode Power MOSFET

Download the G040P04 datasheet PDF. This datasheet also covers the G040P04M variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -222A < 3.5mΩ < 4.5mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G040P04M-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G040P04
Manufacturer GOFORD
File Size 924.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G040P04 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G040P04M P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -222A < 3.5mΩ < 4.
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