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MMST5401 - PNP General Purpose Transistor

Key Features

  • Epitaxial planar die construction.
  • Complementary NPN type available (MMST5551).
  • Also available in lead free version. Pb Lead-free MMST5401.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMST5551).  Also available in lead free version. Pb Lead-free MMST5401 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMST5401 K4M SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO collector-base voltage collector-emitter voltage -160 -150 VEBO emitter-base voltage -5 IC collector current (DC) -0.6 PC RθJA Tj ,Tstg Collector dissipation Thermal resistance junction to ambient junction and storage temperature 0.2 625 -55 to +150 UNIT V V V A W °C/W °C F055 Rev.A www.gmesemi.