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BL1N60 - N-Channel Power Mosfet

Features

  • RDS(ON) =9.3Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 5.0nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL1N60 TO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =9.3Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 5.0nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 3.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL1N60 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 1.2 A ID Continuous Drain current TC=100℃ 0.76 A EAS Single Pulse Avalanche Energy(Note3) 50 EAR Avalanche Energy,Repetitive(Note2) 4.0 IAR Avalanche Current(Note2) 1.2 ISD Continuous Drain-Source Current 1.
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