Full PDF Text Transcription for 2SD1757 (Reference)
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2SD1757. For precise diagrams, and layout, please refer to the original PDF.
Silicon Epitaxial Planar Transistor FEATURES Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). Optimal for muting. Power dissipation.PD=200mW. Pb Lead-free Production specifi...
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muting. Power dissipation.PD=200mW. Pb Lead-free Production specification 2SD1757 APPLICATIONS Audio frequency general. ORDERING INFORMATION Type No. Marking 2SD1757 AAQ/AAR/AAS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 15 VEBO Emitter-Base Voltage 6.5 IC Collector Current -Continuous 500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C156 Rev.A www.gmesemi.
2SD1757 Datasheet
