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2SA1162 - Silicon Epitaxial Planar Transistor

Features

  • Excellent hFE linearity.
  • Commplementary to 2SC2712.
  • High voltage and high current.
  • Low noise. Pb Lead-free 2SA1162.

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C092 Rev.A www.gmesemi.
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