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2SA1204 - Silicon Planar Epitaxial Transistor

Key Features

  • z Suitable for output stage of1 watts Amplifier Pb Lead-free z Suitable flat package z High DC current gain z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2884 Production specification 2SA1204.

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Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of1 watts Amplifier Pb Lead-free z Suitable flat package z High DC current gain z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2884 Production specification 2SA1204 ORDERING INFORMATION Type No. Marking 2SA1204 RO/RY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -800 IB Base Current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) -160 500 1000(Note1) -55 to +150 Units V V V mA mA mW ℃ E039 Rev.A www.gmicroelec.