GOFORD
G40N03A
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30 33
-
--
1
- - ±100
V
μA
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.5
2.3
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=10V, ID=10A
VGS=4.5V, ID=10A
VDS=5V,ID=20A
- 5.1
6.5
mΩ
- 8.2 10
15 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 1560
- 280
-
-
PF
PF
Crss
- 155
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V,ID=10A
VGS=10V,RGEN=1.8Ω
VDS=15V,ID=9A,
VGS=10V
- 11
-9
- 33
-7
- 19
- 2.8
- 2.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=20A
- 0.83 1.2
V
IS
--
25
A
trr
TJ = 25°C, IF = 10A
- 25
37
nS
Qrr
di/dt = 100A/μs(Note3)
- 14
22
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.1mH,Rg=25Ω
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