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G40N03A Datasheet Preview

G40N03A Datasheet

N-Channel Enhancement Mode Power MOSFET

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GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G40N03A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =40A
RDS(ON) <6.5m@ VGS=10V
RDS(ON) < 10m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible power supply
G40N03A
Schematic diagram
G40N03A
Marking and pin Assignment
100% UIS TESTED!
DFN 3x3 EP top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
40
28
120
35
0.28
140
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
www.goford.cn TEL0755-29961262 FAX0755-29961466
Page 1




GFD

G40N03A Datasheet Preview

G40N03A Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

GOFORD
G40N03A
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30 33
-
--
1
- - ±100
V
μA
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.5
2.3
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=10V, ID=10A
VGS=4.5V, ID=10A
VDS=5V,ID=20A
- 5.1
6.5
m
- 8.2 10
15 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 1560
- 280
-
-
PF
PF
Crss
- 155
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V,ID=10A
VGS=10V,RGEN=1.8
VDS=15V,ID=9A,
VGS=10V
- 11
-9
- 33
-7
- 19
- 2.8
- 2.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=20A
- 0.83 1.2
V
IS
--
25
A
trr
TJ = 25°C, IF = 10A
- 25
37
nS
Qrr
di/dt = 100A/μs(Note3)
- 14
22
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.1mH,Rg=25
www.goford.cn TEL0755-29961262 FAX0755-29961466
Page 2


Part Number G40N03A
Description N-Channel Enhancement Mode Power MOSFET
Maker GFD
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