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G40N03A - N-Channel Enhancement Mode Power MOSFET

Description

The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =40A RDS(ON).

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Datasheet Details

Part number G40N03A
Manufacturer GFD
File Size 878.22 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G40N03A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =40A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.
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