G40N120CE Datasheet TSG40N120CE

Manufacturer: Taiwan Semiconductor

G40N120CE tsg40n120ce by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	G40N120CE
Manufacturer	Taiwan Semiconductor
File Size	649.41 KB
Description	TSG40N120CE
Datasheet	G40N120CE Datasheet

General Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Overview

TO-264 Pin Definition: 1.

Gate 2.

Collector 3.

Key Features

Block Diagram.
1200V NPT Trench Technology.
High Speed Switching.
Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current TC=25oC TC=100oC VCES VGES IC Pulsed Collector Current.
Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation TJ.

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