5N60F Datasheet | GFD

DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS 5N60/5N60F VDSS RDS(ON) 600V 2.5Ω 4.5A Features - 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V - Low gate charge ( typical 17n C) - Fast switching - 100% avalanche tested - Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 5N60/5N60F TO-220/220F 0GFD .goford.cn TEL：0755-86350980 FAX：0755-86350963 5N60/5N60F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 5N60 VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC =...