5N60F mosfet equivalent, 600v n-channel mosfet.
* 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
* Low gate charge ( typical 17nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
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This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low .
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