* 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
* Low gate charge ( typical 16nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Orderin.

This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high effic.

4N60

4N60-C

4N60-CB

4N60-E

4N60-N

4N60-Q

4N60-R

4N60-S

4N60-TA5

4N600

4N60A

4N60AF

4N60AS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts