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IRFD1Z3 Datasheet, GE

IRFD1Z3 transistor equivalent, field effect power transistor.

IRFD1Z3 Avg. rating / M : 1.0 rating-15

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IRFD1Z3 Datasheet

Features and benefits


* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature

Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

Image gallery

IRFD1Z3 Page 1 IRFD1Z3 Page 2

TAGS

IRFD1Z3
FIELD
EFFECT
POWER
TRANSISTOR
IRFD1Z0
IRFD1Z1
IRFD1Z2
GE

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