IRFD1Z3 - N-Channel MOSFET

Product Overview

Harris Semiconductor

Datasheet Details

Part number	IRFD1Z3
Manufacturer	Harris Semiconductor
File Size	57.16 KB
Description	N-Channel MOSFET
Datasheet	IRFD1Z3 Datasheet
Note	This datasheet PDF includes multiple part numbers: IRFD1Z3, IRFD1Z0. Please refer to the document for exact specifications by model.
Additional preview pages of the IRFD1Z3 datasheet.

Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

0.4A and 0.5A, 60V and 100V.
rDS(ON) = 2.4Ω and 3.2Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

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Other Datasheets by Harris Semiconductor

IRFD1Z0 - N-Channel MOSFET
IRFD1Z1 - N-Channel MOSFET
IRFD1Z2 - N-Channel MOSFET
IRFD120 - N-Channel MOSFET
IRFD121 - N-Channel MOSFET
IRFD122 - N-Channel Power MOSFET

Published: Sep 10, 2018 |