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IRFD1Z3 Datasheet N-Channel MOSFET

Manufacturer: Harris Semiconductor

Download the IRFD1Z3 datasheet PDF. This datasheet also includes the IRFD1Z0 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRFD1Z0-HarrisSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRFD1Z3
Manufacturer Harris Semiconductor
File Size 57.16 KB
Description N-Channel MOSFET
Download IRFD1Z3 Download (PDF)

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

Formerly developmental type TA17451.

Overview

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.

Key Features

  • 0.4A and 0.5A, 60V and 100V.
  • rDS(ON) = 2.4Ω and 3.2Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

📁 Similar Datasheet

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