IRFD1Z3, IRFD1Z0 Datasheet - Harris Semiconductor

IRFD1Z3 N-Channel MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can.

IRFD1Z3 Features

* 0.4A and 0.5A, 60V and 100V

* rDS(ON) = 2.4Ω and 3.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Gu

IRFD1Z0-HarrisSemiconductor.pdf

IRFD1Z3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFD1Z3, IRFD1Z0. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFD1Z3, IRFD1Z0

Manufacturer:

Harris Semiconductor

File Size:

57.16 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFD1Z3, IRFD1Z0.
Please refer to the document for exact specifications by model.

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IRFD1Z3 IRFD1Z0 N-Channel MOSFET Harris Semiconductor

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