IGT6E10 transistor equivalent, insulated gate bipolar transistor.
* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10.
operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power sup.
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