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IGT60R190D1S - 600V enhancement-mode Power Transistor

Key Features

  • Enhancement mode transistor.
  • Normally OFF switch.
  • Ultra fast switching.
  • No reverse-recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Superior commutation ruggedness.
  • Qualified for standard grade.

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Datasheet Details

Part number IGT60R190D1S
Manufacturer Infineon
File Size 564.52 KB
Description 600V enhancement-mode Power Transistor
Datasheet download datasheet IGT60R190D1S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback).