Full PDF Text Transcription for IGT60R190D1S (Reference)
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IGT60R190D1S. For precise diagrams, and layout, please refer to the original PDF.
IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse...
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e transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for standard grade applications according to JEDEC standards Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switchi
IGT60R190D1S Datasheet
