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IGT60R190D1S - 600V enhancement-mode Power Transistor

IGT60R190D1S Description

IGT60R190D1S IGT60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor .

IGT60R190D1S Features

* Enhancement mode transistor
* Normally OFF switch
* Ultra fast switching
* No reverse-recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness

IGT60R190D1S Applications

* according to JEDEC standards Benefits
* Improves system efficiency
* Improves power density
* Enables higher operating frequency
* System cost reduction savings
* Reduces EMI G G SK 1 1 SK SK G 1 1 Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications

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