MB85R4001A fram equivalent, memory fram.
* Bit configuration
: 524,288 words × 8 bits
* Read/write endurance
: 1010 times / byte
* Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C)
The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R4001A is able to retain .
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