MB85R1001A 8) equivalent, 1 m bit (128 k x 8).
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* Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 131,072 wor.
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain dat.
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