MRF8P20160HSR3 transistor equivalent, rf power field effect transistor.
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large-Signal Load-Pul.
with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capaci.
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