MRF7S19210HSR3 transistors equivalent, rf power field effect transistors.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for E.
with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitors 470 μF Electrolytic Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Pa.
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