MRF5S19150HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 V Operation .
at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. www.datasheet4u.c.
MRF5S19150HR3 MRF5S19150HSR3 RF Device Data Freescale Semiconductor 3
C17 C18 C9 B1 R3 VGG R2 www.datasheet4u.com R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23
C4 C1 C2 C10 C3 C11 C12
C32 C33 C26 C27
B2 MRF5S19150 Rev 4
R4.
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