MMG3015NT1 transistor equivalent, heterojunction bipolar transistor.
* Frequency: 0--6000 MHz
* P1dB: 20.5 dBm @ 900 MHz
* Small--Signal Gain: 15.5 dB @ 900 MHz
* Third Order Output Intercept Point: 36 dBm @ 900 MHz
* S.
It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UH.
Pin Number
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
2
123
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device M.
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