MMG3012NT1 transistor equivalent, heterojunction bipolar transistor.
* Frequency: 0--6000 MHz
* P1dB: 18.5 dBm @ 900 MHz
* Small--Signal Gain: 19 dB @ 900 MHz
* Third Order Output Intercept Point: 34 dBm @ 900 MHz
* Sin.
It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UH.
Pin Number
Pin Function
1 RFin 2 Ground
3 RFout/DC Supply
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101)
Table 7. Moistu.
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