PFV218N50 mosfet equivalent, 500v n-channel mosfet.
* 550V @TJ = 150°C
* Typ. RDS(on) = 0.265Ω @VGS = 10 V
* Low gate charge (typical 42 nC)
* Low Crss (typical 11 pF)
* Fast switching
* 100% avalan.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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