PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone
Hitachi Semiconductor (now Renesas)
Key Features
Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ
Pin Arrangement.
RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Ts.
MOS FET Power Amplifier Module for E-GSM Handy Phone
Full PDF Text Transcription (Reference)
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PF00105A
MOS FET Power Amplifier Module for AMPS Handy Phone
ADE-208-447C (Z) 4th Edition February 1998 Features
• • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ
Pin Arrangement
• RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.
PF00105A Datasheet
