P2N80 fqp2n80 equivalent, fqp2n80.
* 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested
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GD S
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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