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Fairchild Semiconductor Electronic Components Datasheet

KSH44H11I Datasheet

NPN Epitaxial Silicon Transistor

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April 2015
KSH44H11 / KSH44H11I
NPN Epitaxial Silicon Transistor
Features
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector-Emitter Saturation Voltage
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
Applications
• Switching Regulators
• Converters
• Power Amplifiers
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
KSH44H11TF
KSH44H11TM
KSH44H11ITU
Top Mark
KSH44H11
KSH44H11
KSH44H11-I
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Packing Method
Tape and Reel
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC = 25°C)
Collector Dissipation (TA = 25°C)
Junction Temperature
Storage Temperature
80
5
8
16
20.00
1.75
150
- 65 to +150
V
V
A
A
W
°C
°C
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

KSH44H11I Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO(sus)
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Parameter
Conditions
Collector-Emitter Sustaining Voltage(1) IC = 30 mA, IB = 0
Collector Cut-Off Current
VCE = 80 V, IB = 0
Emitter Cut-Off Current
VEB = 5 V, IC = 0
DC Current Gain
VCE = 1 V, IC = 2 A
VCE = 1 V, IC = 4 A
Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A
Base-Emitter Saturation Voltage
IC = 8 A, IB = 0.8 A
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.5 A
Output Capacitance
VCB = 10 V, f = 1 MHz
Turn-On Time
Storage Time
Fall Time
IC = 5 A,
IB1 = - IB2 = 0.5 A
Note:
1. Pulse test: pulse width 300 μs, duty cycle 2%.
Min.
80
60
40
Typ.
50
130
300
500
140
Max.
10
50
1
1.5
Unit
V
μA
μA
V
V
MHz
pF
ns
ns
ns
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
2
www.fairchildsemi.com


Part Number KSH44H11I
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
Total Page 6 Pages
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