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Fairchild Semiconductor Electronic Components Datasheet

ISL9N312AD3ST Datasheet

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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June 2002
ISL9N312AD3 / ISL9N312AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.010(Typ), VGS = 10V
• rDS(ON) = 0.017(Typ), VGS = 4.5V
• Qg (Typ) = 13nC, VGS = 5V
• Qgd (Typ) = 4.5nC
• CISS (Typ) = 1450pF
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
N312AD
N312AD
Device
ISL9N312AD3ST
ISL9N312AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Ratings
30
±20
50
32
11
Figure 4
75
0.5
-55 to 175
2
100
52
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Tape Width
16mm
NA
Quantity
2500 units
50 units
©2002 Fairchild Semiconductor Corporation
ISL9N312AD3 / ISL9N312AD3ST Rev C


Fairchild Semiconductor Electronic Components Datasheet

ISL9N312AD3ST Datasheet

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 25V
VGS = 0V
TC = 150o
VGS = ±20V
30
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 50A, VGS = 10V
ID = 32A, VGS = 4.5V
1 - 3V
- 0.010 0.012
- 0.017 0.020
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain MillerCharge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VDD = 15V
VGS = 0V to 1V ID = 32A
Ig = 1.0mA
-
-
-
-
-
-
-
-
1450
300
120
25
13
1.5
4.3
4.5
-
-
-
38
20
2.3
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics (VGS = 4.5V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 11A
VGS = 4.5V, RGS = 11
- - 115 ns
- 15 - ns
- 60 - ns
- 25 - ns
- 30 - ns
- - 83 ns
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 11A
VGS = 10V, RGS = 11
- - 57 ns
- 8 - ns
- 30 - ns
- 45 - ns
- 30 - ns
- - 115 ns
Unclamped Inductive Switching
tAV Avalanche Time
ID = 2.9A, L = 3.0mH
195 -
- µs
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 32A
ISD = 15A
ISD = 32A, dISD/dt = 100A/µs
ISD = 32A, dISD/dt = 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 20 ns
- 7 nC
©2002 Fairchild Semiconductor Corporation
ISL9N312AD3 / ISL9N312AD3ST Rev C


Part Number ISL9N312AD3ST
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Maker Fairchild Semiconductor
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ISL9N312AD3ST Datasheet PDF






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Fairchild Semiconductor





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