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ISL9N315AD3ST - N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

Download the ISL9N315AD3ST datasheet PDF. This datasheet also covers the ISL9N315AD3 variant, as both devices belong to the same n-channel logic level pwm optimized ultrafet trench power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL9N315AD3_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
ISL9N315AD3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N310AD3 N-Channel Power MOSFET
ISL9N310AD3ST N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ISL9N315AD3 / ISL9N315AD3ST February 2003 ISL9N315AD3 / ISL9N315AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83337 Features • Fast switching • rDS(ON) = 0.012Ω (Typ), VGS = 10V • rDS(ON) = 0.022Ω (Typ), VGS = 4.5V • Qg (Typ) = 18nC, VGS = 5V • Qgd (Typ) = 3.