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Fairchild Semiconductor Electronic Components Datasheet

ISL9N308AD3 Datasheet

N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m

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June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power MOSFETs
30V, 50A, 8m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.0064(Typ), VGS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.010(Typ), VGS = 4.5V
• Qg (Typ) = 24nC, VGS = 5V
Applications
• DC/DC converters
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) Note 1
Continuous (TC = 100oC, VGS = 4.5V) Note 1
Continuous (TC = 25oC, VGS = 10V, RθJC = 52oC/W)
Pulsed
PD
TJ, TSTG
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
30
±20
50
48
14
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-252, TO-251
1.5 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, TO-251
100 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Package Marking and Ordering Information
Device Marking
N308AD
N308AD
Device
ISL9N308AD3ST
ISL9N308AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C


Fairchild Semiconductor Electronic Components Datasheet

ISL9N308AD3 Datasheet

N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 25V
VGS = 0V
TC = 150o
VGS = ±20V
30
-
-
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 50A, VGS = 10V
ID = 48A, VGS = 4.5V
1
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain MillerCharge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VDD = 15V
VGS = 0V to 1V ID = 48A
Ig = 1.0mA
-
-
-
-
-
-
-
-
Switching Characteristics (VGS = 4.5V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 14A
VGS = 4.5V, RGS = 6.2
-
-
-
-
-
-
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 14A
VGS = 10V, RGS = 6.2
-
-
-
-
-
-
Unclamped Inductive Switching
tAV Avalanche Time
ID = 3.2A, L = 3.0mH
215
Typ Max
--
-1
- 250
- ±100
-
0.0064
0.010
3
0.008
0.012
2600
520
225
45
24
2.6
7
8
-
-
-
68
37
4.0
-
-
- 122
15 -
67 -
35 -
32 -
- 100
- 71
8-
40 -
64 -
31 -
- 142
--
Units
V
µA
nA
V
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: TO-251AA continuous current limited by package to 35A.
ISD = 48A
ISD = 20A
ISD = 48A, dISD/dt = 100A/µs
ISD = 48A, dISD/dt = 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 26 ns
- 14 nC
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C


Part Number ISL9N308AD3
Description N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m
Maker Fairchild Semiconductor
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ISL9N308AD3 Datasheet PDF






Similar Datasheet

1 ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m
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2 ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m
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