ISL9N308AS3ST - N-Channel MOSFET

Fairchild (onsemi)

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

low gate charge while maintaining low on-resistance. Optimized for switching.

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ISL9N308AS3ST n-channel mosfet by Fairchild (onsemi) - Datasheet Preview

Datasheet Details

Part number	ISL9N308AS3ST
Manufacturer	Fairchild (onsemi)
File Size	140.87 KB
Description	N-Channel MOSFET
Datasheet	ISL9N308AS3ST Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N308AP3/ISL9N308AS3ST January 2002 PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 8mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0064Ω (Typ), VGS = 10V • rDS(ON) = 0.010Ω (Typ), VGS = 4.