IRFW710B Datasheet 400V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

IRFW710B 400v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRFW710B
Manufacturer	Fairchild (now onsemi)
File Size	646.30 KB
Description	400V N-Channel MOSFET
Download	IRFW710B Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Overview

IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET.

Key Features

2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V.
Low gate charge ( typical 7.7 nC).
Low Crss ( typical 6.0 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain C.

More Datasheets from Fairchild (now onsemi)

Part Number	Description
IRFW710A	Power MOSFET
IRFW710S	Power MOSFET
IRFW720B	400V N-Channel MOSFET
IRFW720S	Power MOSFET
IRFW730B	400V N-Channel MOSFET
IRFW730S	Power MOSFET
IRFW740A	Advanced Power MOSFET
IRFW740B	400V N-Channel MOSFET
IRFW740S	Power MOSFET
IRFW520A	Advanced Power MOSFET