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IRFW710B Datasheet, Fairchild Semiconductor

IRFW710B mosfet equivalent, 400v n-channel mosfet.

IRFW710B Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 646.30KB)

IRFW710B Datasheet

Features and benefits


* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
* Low gate charge ( typical 7.7 nC)
* Low Crss ( typical 6.0 pF)
* Fast switching
* 100% avalanche tested

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

Image gallery

IRFW710B Page 1 IRFW710B Page 2 IRFW710B Page 3

TAGS

IRFW710B
400V
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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