IRFW710B Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic...
IRFW710B Key Features
- 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
- Low gate charge ( typical 7.7 nC)
- Low Crss ( typical 6.0 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability