Datasheet4U Logo Datasheet4U.com

FQP5N60 - 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curren.

📥 Download Datasheet

Datasheet preview – FQP5N60

Datasheet Details

Part number FQP5N60
Manufacturer Fairchild Semiconductor
File Size 541.60 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQP5N60 Datasheet
Additional preview pages of the FQP5N60 datasheet.

📁 Similar Datasheet

  • FQP5N60 - 5A N-Channel MOSFET (Oucan Semi)
  • FQP5N60C - N-Channel MOSFET (HAOHAI)
  • FQP5N50 - 5A N-Channel MOSFET (Oucan Semi)
  • FQP50N06 - N-Channel Power MOSFET (Thinki Semiconductor)
  • FQP50N06 - N-Channel MOSFET (INCHANGE)
  • FQP50N06L - N-Channel MOSFET (ON Semiconductor)
  • FQP50N06L - N-Channel MOSFET (INCHANGE)
  • FQP10N20 - N-Channel 200V MOSFET (VBsemi)
  • FQP10N20C - N-Channel MOSFET (INCHANGE)
  • FQP10N60 - N-Channel MOSFET (Oucan Semi)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQP5N60 April 2000 QFET FQP5N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.
Published: |