FQP5N60
Description
Product Summary
The FQP5N60 & FQPF5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=12V)
100% UIS Tested 100% Rg Tested
600V@150℃ 5A <1.9 Ω
TO-220
Top View
TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP4N60
FQPF4N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
5 5- 2.9 2.9-
16 2.5 99 200 50
TC=25°C Power Dissipation B Derate above 25o...
