FQB34P10 mosfet equivalent, mosfet.
* -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A
* Low Gate Charge (Typ. 85 nC)
* Low Crss (Typ. 170 pF)
* 100% Avalanche Tested
Features
* -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A
* Low Gate Charge (Typ. 85 nC).
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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