FQB34P10TM_F085
Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
- Low gate charge ( typical 85 nC)
- Low Crss ( typical 170 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Qualified to AEC Q101
- RoHS Compliant
- G! GS D2-PAK FQB Series
