FQB34P10TM_F085 - 100V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQB34P10TM_F085
Manufacturer	Fairchild Semiconductor
File Size	1.12 MB
Description	100V P-Channel MOSFET
Datasheet	FQB34P10TM_F085 Datasheet
Additional preview pages of the FQB34P10TM_F085 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V.
Low gate charge ( typical 85 nC).
Low Crss ( typical 170 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating.
Qualified to AEC Q101.
RoHS Compliant D G! GS D2-PAK FQB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-S.

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Published: Jun 17, 2015 |