FQB34P10TM_F085 mosfet equivalent, 100v p-channel mosfet.
* -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical 170 pF)
* Fast switching
* 100% avalanche tested.
such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
* -33.5A, -100V.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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