| Title | N채널 900V 4.1A(Tc) 90W(Tc) 스루홀 TO-3PF |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode ... |
| Features |
• • • • • • 4.1A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Param... |
| Datasheet |
 FQAF5N90 Datasheet - 660.54KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 BuyNow - Manufacturer a onsemi FQAF5N90
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
|
 Rochester Electronics |
1000 units: 1.04 USD 500 units: 1.11 USD 100 units: 1.15 USD 25 units: 1.2 USD 1 units: 1.23 USD |
BuyNow |
