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FQAF10N80 - 800V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQAF10N80
Manufacturer: Fairchild Semiconductor
File Size: 700.01 KB
Datasheet: FQAF10N80_FairchildSemiconductor.pdf
Description: 800V N-Channel MOSFET

FQAF10N80 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! G D S TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

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800V N-Channel MOSFET Fairchild Semiconductor

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FQAF10N80 Stock/Price