FQAF10N80 Datasheet | Fairchild Semiconductor

QFET 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply. Features - - - - - - 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 n C) Low Crss ( typical 24 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G D S TO-3PF FQAF...