FQA7N80C_F109 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
* Low Gate Charge (Typ. 27nC)
* Low Crss (Typ. 10pF)
* 100% Avalanche Tested
* RoHS Co.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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